Tanaka Kikinzoku Kogyo has unveiled a ruthenium material able to form a film up to six times the normal depth for capacitor electrodes used in semiconductor memory DRAM (Dynamic Random Access Memory).

The firm, part of Tanaka Precious Metals, developed the material in conjunction with professor Seiji Ogo from Kyushu University.

It hopes to commercialise the material this year for use in the miniaturisation of next-generation DRAM.

This ruthenium material is a Metalorganic Chemical Vapor Deposition film formation material that can be used in next-generation DRAM with a circuit of 20 nanometres

According to the company, the film enables the manufacture of capacitor electrodes with six times the normal depth.

"Semiconductor manufacturers are considering the mass production of next-generation semiconductors in the 20-nanometre range during 2012, and by using this ruthenium precursor the manufacture of capacitor electrodes able to support miniaturisation in the 20-nanometre generation and later," Tanaka said in a statement.

Source:

Tanaka Precious Metals Develops World's First Ruthenium Material Able to Form a Film Up to Six Times the Normal Depth for DRAM Capacitor Electrodes (19/01/12)

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