Intel has filed a patent for new ruthenium-based multi-layer reflective extreme ultraviolet (EUV)lithography mask blanks.

EUV lithography is a relatively new form of lithography designed to carry out projection imaging, which is used in the high-volume manufacture of integrated circuits.

Now Intel says it has found a new way to improve the blanks used in EUV, as reported in Optics.org.

Patent application number WO 2005/013003 outlines how the US chip manufacturer will incorporate a ruthenium capping layer into the mask.

Usually substances such as silicon and molybdenum in are used to create the reflective masks, but now the firm is confident of using the pgm.

Ruthenium has a higher EUV absorption coefficient than silicon, and also offers resistance to oxidation and improved chemical cleaning resistance.