FSI International has announced details of a new platinum-based technique as part of the production of integrated circuits (IC).

The firm says that it has developed a new nickel-platinum strip process designed to facilitate salicide formation at the 65-nm technology node.

By adapting the standard nickel silicide treatment for salicide formation at the 65-nm node, FSI says it has achieved far superior results.

Adding a small amount of platinum to the strip means that the thermal stability of the resulting silicide film is improved.

FSI says it has now negotiated the typical problem posed when using platinum - namely the difficulty in ensuring a platinum reside does not remain when using sulphuric acid-hydrogen peroxide solutions to strip nickel.

Don Mitchell, FSI chairman and chief executive, said he was pleased with the breakthrough which would help move the industry forward.

"This process builds on FSI's long successful history in metal stripping for salicide formation," he commented.

"Over 20 leading IC makers use FSI's batch spray cleaning systems in high volume manufacturing for salicide metal stripping applications. By continuing to expand our process capabilities, we ensure customers reap the benefits associated with our tools' ability to extend over several technology nodes."

FSI International is a global supplier of surface conditioning equipment technology and support services designed to optimise the process of microelectronics manufacturing.